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Electronic transport in ultrathin gold films on Si(111)

Klages, S.; Schöck, M.; Sürgers, C.; Löhneysen, H. von

The morphology and electronic transport of ultrathin Au films with thicknesses d = 1 − 5 monolayers (ML) deposited on Si(111)7 × 7 surfaces is investigated by in situ scanning tunneling microscopy and electrical resistance measurements for temperatures T = 2 − 300 K. With decreasing film thickness, i.e. decreasing sheet conductance Gs, a transition from a weakly conducting regime described by a logarithmic temperature dependence to an insulating regime occurs. In the insulating regime, the temperature dependence is described by Gs ∝ exp[−(T 0 /T) n] with an exponent n which gradually changes from 0.69 to 1 with decreasing film thickness. In contrast, for the Si(111)6 × 6-Au reconstruction obtained after annealing, an exponent n = 1/2 is found suggesting the formation of a soft Coulomb gap due to electron-electron interaction. PACS numbers: 68.37.-d, 68.55.-a, 73.50.-h, 73.25.+i,

DOI: 10.1023/B:JOLT.0000049068.94956.26
Zitationen: 3
Web of Science
Zitationen: 3
Seitenaufrufe: 6
seit 01.05.2018
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Institut für Festkörperphysik (IFP)
Publikationstyp Zeitschriftenaufsatz
Jahr 2004
Sprache Englisch
Identifikator ISSN: 0022-2291
KITopen-ID: 1000003302
HGF-Programm 52.01.01 (POF I, LK 01)
Erschienen in Journal of low temperature physics
Band 137
Heft 3-4
Seiten 509-22
Schlagworte Characterization and Evaluation Materials, Condensed Matter, Magnetism, Magnetic Materials
Nachgewiesen in Web of Science
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