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Relations between Crystal-Structure and Growth-Morphology of Beta-Si3N4

Kramer, M.; Wittmuss, D.; Kuppers, H.; Hoffmann, M. J.; Petzow, G.


A PBC analysis of beta-Si3N4 has been carried out by computer
calculations taking into account the atom positions for F-face
identification and bond lengths as a measure of bonding energy for face
prominence. A rod-like habit with the prism {100} and the pyramids
{101} and {101BAR} has been theoretically deduced, which can be
observed on crystals grown under a reducing atmosphere. In the presence
of oxides, preferably silica, (001) and (001BAR), which are of K-type,
dominate over {101} and {101BAR}. This is attributed to face specific
adsorption. The growth rate anisotropy between {100} and (001) and
(001BAR) faces can be explained by a model derived from the crystal
structure according to the growth theory of Kossel and Stranski.
Conclusions are drawn concerning interface roughness and aspect ratio

Zugehörige Institution(en) am KIT Fakultät für Maschinenbau – Institut für Keramik im Maschinenbau (IKM)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 1994
Sprache Englisch
Identifikator ISSN: 0022-0248
KITopen-ID: 1000007786
Erschienen in Journal of Crystal Growth
Verlag Elsevier
Band 140
Heft 1-2
Seiten 157-166
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