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DOI: 10.1063/1.2969403
Zitationen: 35
Web of Science
Zitationen: 30

Magnetic order by C-ion implantation into Mn₅Si₃ and Mn₅Ge₃ and its lateral modification

Sürgers, C.; Potzger, K.; Strache, T.; Möller, W.; Fischer, G.; Joshi, N.; Löhneysen, H. von

Ferromagnetic Mn(5)Si(3)C(0.8) and Mn(5)Ge(3)C(0.8) films with Curie temperatures T(C) well above room temperature are obtained by (12)C(+)-ion implantation in antiferromagnetic Mn(5)Si(3) or ferromagnetic Mn(5)Ge(3). Patterning of the films with a gold mesh serving as a stencil mask during implantation allows a lateral modification of magnetic order creating ferromagnetic regions of Mn(5)Si(3)C(0.8) which are embedded in antiferromagnetic Mn(5)Si(3). This provides a procedure for the fabrication of magnetoelectronic hybrid devices comprised of different magnetic phases. (C) 2008 American Institute of Physics.

Zugehörige Institution(en) am KIT Institut für Festkörperphysik (IFP)
Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 2008
Sprache Englisch
Identifikator ISSN: 0003-6951
KITopen-ID: 1000013570
HGF-Programm 43.02.03 (POF I, LK 01)
Erschienen in Applied Physics Letters
Band 93
Heft 6
Seiten 062503/1 - 3
Nachgewiesen in Web of Science
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