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Magnetic order by C-ion implantation into Mn₅Si₃ and Mn₅Ge₃ and its lateral modification

Sürgers, C.; Potzger, K.; Strache, T.; Möller, W.; Fischer, G.; Joshi, N.; Löhneysen, H. von

Ferromagnetic Mn(5)Si(3)C(0.8) and Mn(5)Ge(3)C(0.8) films with Curie temperatures T(C) well above room temperature are obtained by (12)C(+)-ion implantation in antiferromagnetic Mn(5)Si(3) or ferromagnetic Mn(5)Ge(3). Patterning of the films with a gold mesh serving as a stencil mask during implantation allows a lateral modification of magnetic order creating ferromagnetic regions of Mn(5)Si(3)C(0.8) which are embedded in antiferromagnetic Mn(5)Si(3). This provides a procedure for the fabrication of magnetoelectronic hybrid devices comprised of different magnetic phases. (C) 2008 American Institute of Physics.

DOI: 10.1063/1.2969403
Zitationen: 36
Web of Science
Zitationen: 31
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Institut für Festkörperphysik (IFP)
Publikationstyp Zeitschriftenaufsatz
Jahr 2008
Sprache Englisch
Identifikator ISSN: 0003-6951
KITopen-ID: 1000013570
HGF-Programm 43.02.03 (POF I, LK 01)
Erschienen in Applied Physics Letters
Band 93
Heft 6
Seiten 062503/1 - 3
Nachgewiesen in Scopus
Web of Science
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