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DOI: 10.1103/PhysRevB.77.104414
Zitationen: 20
Web of Science
Zitationen: 18

Electronic transport in magnetically ordered Mn₅Si₃Cₓ films

Gopalakrishnan, B.; Sürgers, C.; Montbrun, R.; Singh, A.; Uhlarz, M.; Löhneysen, H. v.

Mn(5)Si(3)C(x) films exhibit antiferromagnetic or ferromagnetic behavior depending on the carbon doping level x. We report a detailed electronic-transport study of films prepared with different x. All films exhibit metallic behavior of the temperature-dependent resistivity rho(T)similar to-ln T with a logarithmic increase towards low temperatures attributed to the structural disorder and the accompanied scattering of conduction electrons by two-level systems. Below 1 K, the Kondo-type behavior rho(T)similar to-ln T shows a crossover to Fermi-liquid behavior rho similar to-T(2) independent of the type of magnetic order. The magnetoelectronic properties such as Hall effect and magnetoresistance show clear differences characteristic for the different magnetically ordered phases, i.e., antiferromagnetic
vs ferromagnetic.

Zugehörige Institution(en) am KIT Institut für Festkörperphysik (IFP)
Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 2008
Sprache Englisch
Identifikator ISSN: 0163-1829, 0556-2805, 1094-1622, 1095-3795, 1098-0121, 1550-235X, 2469-9950, 2469-9969
KITopen ID: 1000013571
HGF-Programm 43.02.01; LK 01
Erschienen in Physical review / B
Band 77
Heft 10
Seiten Art.Nr. 104414
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