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Identification of P dopants at nonequivalent lattice sites of the Si(111) - (2×1) surface

Garleff, J. K.; Wenderoth, M.; Ulbrich, R. G.; Sürgers, C.; Löhneysen, H. v.; Rohlfing, M.

Substitutional phosphorus atoms at the Si(111)-(2×1) surface have been studied with scanning tunneling microscopy at 8 K. Four different types of the P-induced contrast pattern are distinguished due to their voltage-dependent contrast. Three of them are identified as substitutional P atoms on distinct lattice sites by their spatial symmetry and by comparison with ab initio calculations of the local density of electronic states of substitutional P atoms. The fourth pattern of a P-induced contrast cannot be attributed to the remaining fourth site of the π-bonded chain. This raises questions not only on the origin of this pattern but also on the absence of substitutional P atoms on one lattice position in this surface.

DOI: 10.1103/PhysRevB.76.125322
Zitationen: 16
Web of Science
Zitationen: 15
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Institut für Festkörperphysik (IFP)
Publikationstyp Zeitschriftenaufsatz
Jahr 2007
Sprache Englisch
Identifikator ISSN: 0163-1829, 0556-2805, 1094-1622, 1095-3795, 1098-0121, 1550-235X, 2469-9950, 2469-9969
KITopen-ID: 1000013572
HGF-Programm 43.02.03 (POF I, LK 01)
Erschienen in Physical review / B
Band 76
Heft 12
Seiten Art.Nr. 125322
Nachgewiesen in Scopus
Web of Science
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