Cu-doped GaN grown by molecular beam epitaxy

Cu-doped GaN is a promising candidate for a nitride-based diluted magnetic semiconductor. Theoretical predictions show the possibility of ferromagnetism and high spinpolarization for certain arrangements of Cu atoms in the GaN lattice. Initial experimental results have already indicated ferromagnetism. However, the influence of structural defects on the ferromagnetic order in Cu-doped nitrides is not clear. Hence, the origin of the ferromagnetism is still under debate. We have used density functional theory (DFT) to verify previous theoretical predictions and to investigate the effects of the position of Cu atoms on the ferromagnetic properties. Our DFT calculations show high degrees of spin-polarization, independent of the arrangement of Cu atoms. Additionally, we have investigated the growth of Cu-doped GaN by molecular beam epitaxy. The influence of parameters, such as Cu to Ga ratio and growth temperature, on the structural and magnetic properties will be discussed.