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Optical microcavities fabricated by DBR overgrowth of pyramidal-shaped GaAs mesas

Rülke, D.; Karl, M.; Hu, D.Z.; Schaadt, D.M.; Kalt, H.; Hetterich, M.

Optical cavities have been fabricated by overgrowth of truncated GaAs pyramids with a distributed Bragg reflector. The success of this overgrowth depends strongly on the crystallographic orientation of the pyramid facets and shows best results for View the MathML source A facets. In order to fabricate mesas with precisely such facets, a wet-chemical etching process including several selective etching steps has been established. To determine the optical properties of these resonators, InAs quantum dots have been used as an internal broad-band light source. The quality factors for optical modes have been determined to range up to 8000 and show a dependency on cavity width.

Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Publikationstyp Zeitschriftenaufsatz
Jahr 2011
Sprache Englisch
Identifikator ISSN: 0022-0248
KITopen ID: 1000027110
Erschienen in Journal of Crystal Growth
Band 324
Heft 1
Seiten 259-262
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