Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

In this study, we investigated the effect of in situannealing on InAsquantumdots site-selectively grown on pre-structuredGaAssubstrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantumdots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantumdots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and View the MathML source, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantumdotgrowth.