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Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

Helfrich, M.; Hu, D. Z.; Hendrickson, J.; Gehl, M.; Rülke, D.; Gröger, R.; Litvinov, D.; Linden, S.; Wegener, M.; Gerthsen, D.; Schimmel, T.; Hetterich, M.; Kalt, H.; Khitrova, G.; Gibbs, H.M.; Schaadt, D.M.

Abstract:
In this study, we investigated the effect of in situannealing on InAsquantumdots site-selectively grown on pre-structuredGaAssubstrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantumdots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantumdots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and View the MathML source, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantumdotgrowth.



Originalveröffentlichung
DOI: 10.1016/j.jcrysgro.2010.11.162
Scopus
Zitationen: 12
Web of Science
Zitationen: 8
Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Laboratorium für Elektronenmikroskopie (LEM)
Institut für Nanotechnologie (INT)
Publikationstyp Zeitschriftenaufsatz
Jahr 2011
Sprache Englisch
Identifikator ISSN: 0022-0248, 1873-5002
KITopen-ID: 1000027164
HGF-Programm 43.14.01 (POF II, LK 01)
Erschienen in Journal of crystal growth
Band 323
Heft 1
Seiten 187-190
Nachgewiesen in Web of Science
Scopus
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