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Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

Helfrich, M.; Hu, D. Z.; Hendrickson, J.; Gehl, M.; Rülke, D.; Gröger, R.; Litvinov, D.; Linden, S.; Wegener, M.; Gerthsen, D.; Schimmel, T.; Hetterich, M.; Kalt, H.; Khitrova, G.; Gibbs, H.M.; Schaadt, D.M.

In this study, we investigated the effect of in situannealing on InAsquantumdots site-selectively grown on pre-structuredGaAssubstrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantumdots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantumdots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and View the MathML source, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantumdotgrowth.

Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Institut für Nanotechnologie (INT)
Laboratorium für Elektronenmikroskopie (LEM)
Publikationstyp Zeitschriftenaufsatz
Jahr 2011
Sprache Englisch
Identifikator ISSN: 0022-0248
KITopen ID: 1000027164
HGF-Programm 43.14.01; LK 01
Erschienen in Journal of Crystal Growth
Band 323
Heft 1
Seiten 187 - 190
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