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InAs quantum dot site selective growth on GaAs substrates

Hendrickson, J.; Helfrich, M.; Gehl, M.; Hu, D.; Schaadt, D.; Linden, S.; Wegener, M.; Gibbs, H. M.; Khitrova, G.

Photoluminescence (PL) spectra and AFM measurements of InAs quantum dots grown in a site-selective manner on pre-patterned GaAs substrates are presented. A number of processing steps are described including a Ga-assisted deoxidation step to remove native oxides from the sample surface. Furthermore, post growth annealing is shown to be a promising technique for improving the quantum dot density and likelihood of single site-selective nucleation. Morphological transitions are shown to occur during the annealing process with two initial quantum dots in a given nucleation site transforming into one slightly larger quantum dot. Density measurements performed by AFM combined with PL spectroscopic measurements show that we have achieved optically active, site-selective dot growth, and additionally allow us to calculate that our site-selective dots are on average 30% as efficient as unpatterned dots.

Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Publikationstyp Zeitschriftenaufsatz
Jahr 2011
Sprache Englisch
Identifikator ISSN: 1862-6351
KITopen-ID: 1000027171
Erschienen in Physica Status Solidi (C)
Band 8
Heft 4
Seiten 1242 - 1245
Nachgewiesen in Scopus
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