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Microstructure Characterization of Cu-Alloyed GaN Grown by Plasma Assisted Molecular Beam Epitaxy

Huang, T.-H.; Ganz, P. R.; Chang, L.; Schaadt, D. M.; Bao, J.-S.

Cu-alloyed GaN epilayers were prepared by plasma assisted molecular beam epitaxy with Cu-to-Ga beam equivalent pressure ratio of 1.2 to 4.8 %. Islands enriched with Cu were found on the GaN epitaxial layers grown in a Ga-rich environment. The islands are composed of a Cu9Ga4 intermetallic phase and GaN between which an orientation relationship was identified as [111]Cu9Ga4//[1 10]GaN and (10 )Cu9Ga4//(0001)GaN. X-ray spectroscopy analyses indicated that the 1.2 % and 4.8 % samples contains 0.10 0.02 wt.%Cu and 0.04 0.03 wt.%Cu, respectively.

Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Publikationstyp Zeitschriftenaufsatz
Jahr 2011
Sprache Englisch
Identifikator ISSN: 1938-5862
KITopen ID: 1000027175
Erschienen in ECS Transactions
Band 35
Heft 6
Seiten 83 - 89
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