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Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

Ganz, P. R.; Schaadt, D. M.

Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Publikationstyp Proceedingsbeitrag
Jahr 2011
Sprache Englisch
Identifikator ISBN: 978-0-7354-1001-5
ISSN: 0094-243X
KITopen-ID: 1000027177
Erschienen in Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010, Part B. Ed.: J. Ihm
Verlag AIP Press, Woodbury (NY)
Seiten 691 - 692
Serie AIP Conference Proceedings ; 1399
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