Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?
Abstract:
Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.
| Zugehörige Institution(en) am KIT | Institut für Angewandte Physik (APH) |
| Publikationstyp | Proceedingsbeitrag |
| Publikationsjahr | 2011 |
| Sprache | Englisch |
| Identifikator | ISBN: 978-0-7354-1001-5 ISSN: 0094-243X KITopen-ID: 1000027177 |
| Erschienen in | Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010, Part B. Ed.: J. Ihm |
| Verlag | American Institute of Physics (AIP) |
| Seiten | 691 - 692 |
| Serie | AIP Conference Proceedings ; 1399 |