Thermal annealing of InAs quantum dots on patterned GaAs substrates
Abstract:
We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.
| Zugehörige Institution(en) am KIT | Institut für Angewandte Physik (APH) |
| Publikationstyp | Proceedingsbeitrag |
| Publikationsjahr | 2011 |
| Sprache | Englisch |
| Identifikator | ISBN: 978-0-7354-0970-5 ISSN: 0094-243X KITopen-ID: 1000027179 |
| Erschienen in | Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010, Part A. Ed.: J. Ihm |
| Verlag | American Institute of Physics (AIP) |
| Seiten | 217 - 218 |
| Serie | AIP Conference Proceedings ; 1399 |
| Nachgewiesen in | Dimensions |