Growth of M- and A-plane GaN on LiGaO2 by plasma-assisted MBE

We have performed non-polar M- and A-plane GaN growth on LiGaO2 (LGO) by plasma-assisted molecular beam expitaxy (MBE). We demonstrate that non-polar GaN growth on LGO yields high phase purity and flat surfaces. We find that annealing of the substrates prior to growth is a suitable method for avoiding a peeling off of the film from the substrate after growth.