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Growth of M- and A-plane GaN on LiGaO2 by plasma-assisted MBE

Schuber, R.; Chou, M. M. C.; Vincze, P.; Schimmel, Th.; Schaadt, D. M.

We have performed non-polar M- and A-plane GaN growth on LiGaO2 (LGO) by plasma-assisted molecular beam expitaxy (MBE). We demonstrate that non-polar GaN growth on LGO yields high phase purity and flat surfaces. We find that annealing of the substrates prior to growth is a suitable method for avoiding a peeling off of the film from the substrate after growth.

Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Publikationstyp Proceedingsbeitrag
Jahr 2011
Sprache Englisch
Identifikator ISBN: 978-0-7354-0970-5
ISSN: 0094-243X
KITopen ID: 1000027180
Erschienen in Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010, Part A. Ed.: J. Ihm
Verlag AIP Press, Woodbury (NY)
Seiten 191 - 192
Serie AIP Conference Proceedings ; 1399
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