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DOI: 10.1063/1.3308500
Zitationen: 3
Web of Science
Zitationen: 3

Doping and optimal electron spin polarization in n-ZnMnSe for quantum-dot spin-injection light-emitting diodes

Grossmann, T.; Hauser, M.; Beck, T.; Gohn-Kreuz, C.; Karl, M.; Kalt, H.; Vannahme, Ch.; Mappes, T.

Utilizing the diluted magnetic semiconductor ZnMnSe for electron spin alignment near-perfect spin state preparation in semiconductor quantum dots has been demonstrated. We show that the electron spin polarization depends strongly on the electron concentration in ZnMnSe:Cl. Using a model which takes accurately the Zeeman sublevel occupation into account, we can explain well the experimentally observed results. We find that the electron concentration must be below the effective density of states to obtain full electron spin polarization and best device operation. This is especially important in II-VI spin-aligner materials with a low density of states.

Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Publikationstyp Zeitschriftenaufsatz
Jahr 2010
Sprache Englisch
Identifikator ISSN: 0003-6951
KITopen-ID: 1000027184
Erschienen in Applied Physics Letters
Band 96
Heft 5
Seiten 052113/1 -3
Nachgewiesen in Web of Science
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