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Doping and optimal electron spin polarization in n-ZnMnSe for quantum-dot spin-injection light-emitting diodes

Grossmann, T.; Hauser, M.; Beck, T.; Gohn-Kreuz, C.; Karl, M.; Kalt, H. 1; Vannahme, Ch.; Mappes, T.
1 Karlsruher Institut für Technologie (KIT)

Abstract:

Utilizing the diluted magnetic semiconductor ZnMnSe for electron spin alignment near-perfect spin state preparation in semiconductor quantum dots has been demonstrated. We show that the electron spin polarization depends strongly on the electron concentration in ZnMnSe:Cl. Using a model which takes accurately the Zeeman sublevel occupation into account, we can explain well the experimentally observed results. We find that the electron concentration must be below the effective density of states to obtain full electron spin polarization and best device operation. This is especially important in II-VI spin-aligner materials with a low density of states.


Originalveröffentlichung
DOI: 10.1063/1.3308500
Scopus
Zitationen: 4
Web of Science
Zitationen: 3
Dimensions
Zitationen: 5
Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Universität Karlsruhe (TH) – Interfakultative Einrichtungen (Interfakultative Einrichtungen)
Karlsruhe School of Optics & Photonics (KSOP)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2010
Sprache Englisch
Identifikator ISSN: 0003-6951
KITopen-ID: 1000027184
Erschienen in Applied Physics Letters
Verlag American Institute of Physics (AIP)
Band 96
Heft 5
Seiten 052113/1 -3
Nachgewiesen in Scopus
Dimensions
Web of Science
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