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URN: urn:nbn:de:swb:90-290511

Controlling the distribution and the structural properties of positioned quantum dots

Helfrich, Mathieu Frédéric

Abstract:
Indium arsenide quantum dots were site-selectively grown on patterned gallium arsenide substrates. The mechanisms which influence the distribution and the structural properties of positioned quantum dots were investigated. Geometrical parameters of the pits and growth parameters were studied in order to reveal possible ways to control these parameters. In situ annealing experiments were performed, offering additional possibilities to adjust the size and the density of positioned quantum dots.


Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Publikationstyp Hochschulschrift
Jahr 2012
Sprache Englisch
Identifikator KITopen ID: 1000029051
Verlag Karlsruhe
Abschlussart Dissertation
Fakultät Fakultät für Physik (PHYSIK)
Institut Institut für Angewandte Physik (APH)
Prüfungsdaten 13.07.2012
Referent/Betreuer Prof. H. Kalt
Schlagworte Quantum dots, site-selective growth, patterning, in situ annealing
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