Controlling the distribution and the structural properties of positioned quantum dots
Abstract:
Indium arsenide quantum dots were site-selectively grown on patterned gallium arsenide substrates. The mechanisms which influence the distribution and the structural properties of positioned quantum dots were investigated. Geometrical parameters of the pits and growth parameters were studied in order to reveal possible ways to control these parameters. In situ annealing experiments were performed, offering additional possibilities to adjust the size and the density of positioned quantum dots.
| Zugehörige Institution(en) am KIT | Institut für Angewandte Physik (APH) |
| Publikationstyp | Hochschulschrift |
| Publikationsjahr | 2012 |
| Sprache | Englisch |
| Identifikator | urn:nbn:de:swb:90-290511 KITopen-ID: 1000029051 |
| Verlag | Karlsruher Institut für Technologie (KIT) |
| Art der Arbeit | Dissertation |
| Fakultät | Fakultät für Physik (PHYSIK) |
| Institut | Institut für Angewandte Physik (APH) |
| Prüfungsdaten | 13.07.2012 |
| Schlagwörter | Quantum dots, site-selective growth, patterning, in situ annealing |
| Referent/Betreuer | Kalt, H. |