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Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

Alloatti, L.; Lauermann, M.; Sürgers, C.; Koos, C.; Freude, W.; Leuthold, J.

We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm.

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DOI: 10.1063/1.4817255
Zitationen: 25
Web of Science
Zitationen: 24
Zugehörige Institution(en) am KIT Institut für Mikrostrukturtechnik (IMT)
Physikalisches Institut (PHI)
Institut für Photonik und Quantenelektronik (IPQ)
Publikationstyp Zeitschriftenaufsatz
Jahr 2013
Sprache Englisch
Identifikator ISSN: 0003-6951
KITopen-ID: 1000039715
HGF-Programm 43.14.04 (POF II, LK 01)
Erschienen in Applied Physics Letters
Band 103
Heft 5
Seiten 051104/1-5
Nachgewiesen in Web of Science
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