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URN: urn:nbn:de:swb:90-422278
DOI: 10.1038/lsa.2014.54
Zitationen: 118
Web of Science
Zitationen: 93

100 GHz silicon-organic hybrid modulator

Alloatti, L.; Palmer, R.; Diebold, S.; Pahl, K.P.; Chen, B.; Dinu, R.; Fournier, M.; Fedeli, J.-M.; Zwick, T.; Freude, W.; Koos, C.; Leuthold, J.

Electro-optic modulation at frequencies of 100 GHz and beyond is important for photonic-electronic signal processing at the highest speeds. To date, however, only a small number of devices exist that can operate up to this frequency. In this study, we demonstrate that this frequency range can be addressed by nanophotonic, silicon-based modulators. We exploit the ultrafast Pockels effect by using the silicon–organic hybrid (SOH) platform, which combines highly nonlinear organic molecules with silicon waveguides. Until now, the bandwidth of these devices was limited by the losses of the radiofrequency (RF) signal and the RC (resistor-capacitor) time constant of the silicon structure. The RF losses are overcome by using a device as short as 500 µm, and the RC time constant is decreased by using a highly conductive electron accumulation layer and an improved gate insulator. Using this method, we demonstrate for the first time an integrated silicon modulator with a 3dB bandwidth at an operating frequency beyond 100 GHz. Our results clearly indicate that the RC time constant is not a fundamental speed limitation of SOH devices at these fr ... mehr

Zugehörige Institution(en) am KIT Institut für Hochfrequenztechnik und Elektronik (IHE)
Institut für Mikrostrukturtechnik (IMT)
Institut für Photonik und Quantenelektronik (IPQ)
Publikationstyp Zeitschriftenaufsatz
Jahr 2014
Sprache Englisch
Identifikator ISSN: 2047-7538
KITopen ID: 1000042227
HGF-Programm 43.14.04; LK 01
Erschienen in Light: Science & Applications
Band 3
Seiten e173
Bemerkung zur Veröffentlichung Gefördert durch den KIT-Publikationsfonds
Schlagworte 100GHz; high-speed silicon modulator; nanophotonics; silicon–organic hybrid
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