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X-ray investigation of defects in III-nitrides and their alloys

Lazarev, Sergey

In this work structural defects in III-nitrides were investigated mainly using X-ray diffraction method. Williamson-Hall plots and Monte Carlo simulations were used to determine the density of threading dislocations in epilayers with different layer thicknesses. The density of basal plane stacking faults in semipolar (10-11) and (11-22) GaN layers grown on prepatterned sapphire substrates were derived and the dependence of crystallographic orientation of the layers and SiN mask intercalation on structure perfection, was examined.

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DOI: 10.5445/IR/1000043492
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Photonenforschung und Synchrotronstrahlung (IPS)
Publikationstyp Hochschulschrift
Publikationsjahr 2013
Sprache Englisch
Identifikator urn:nbn:de:swb:90-434921
KITopen-ID: 1000043492
Verlag KIT, Karlsruhe
Art der Arbeit Dissertation
Fakultät Fakultät für Physik (PHYSIK)
Institut Institut für Photonenforschung und Synchrotronstrahlung (IPS)
Prüfungsdaten 06.12.2013
Referent/Betreuer Prof. G. T. Baumbach
Schlagwörter X-ray, III-nitrides, defects, threading dislocations, stacking faults
KIT – Die Forschungsuniversität in der Helmholtz-Gemeinschaft
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