X-ray investigation of defects in III-nitrides and their alloys

In this work structural defects in III-nitrides were investigated mainly using X-ray diffraction method. Williamson-Hall plots and Monte Carlo simulations were used to determine the density of threading dislocations in epilayers with different layer thicknesses. The density of basal plane stacking faults in semipolar (10-11) and (11-22) GaN layers grown on prepatterned sapphire substrates were derived and the dependence of crystallographic orientation of the layers and SiN mask intercalation on structure perfection, was examined.