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URN: urn:nbn:de:swb:90-434921

X-ray investigation of defects in III-nitrides and their alloys

Lazarev, Sergey

In this work structural defects in III-nitrides were investigated mainly using X-ray diffraction method. Williamson-Hall plots and Monte Carlo simulations were used to determine the density of threading dislocations in epilayers with different layer thicknesses. The density of basal plane stacking faults in semipolar (10-11) and (11-22) GaN layers grown on prepatterned sapphire substrates were derived and the dependence of crystallographic orientation of the layers and SiN mask intercalation on structure perfection, was examined.

Zugehörige Institution(en) am KIT Institut für Photonenforschung und Synchrotronstrahlung (IPS)
Publikationstyp Hochschulschrift
Jahr 2013
Sprache Englisch
Identifikator KITopen ID: 1000043492
Verlag Karlsruhe
Abschlussart Dissertation
Fakultät Fakultät für Physik (PHYSIK)
Institut Institut für Photonenforschung und Synchrotronstrahlung (IPS)
Prüfungsdaten 06.12.2013
Referent/Betreuer Prof. G. T. Baumbach
Schlagworte X-ray, III-nitrides, defects, threading dislocations, stacking faults
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