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Assessment of crystal quality and unit cell orientation in epitaxial Cu2ZnSnSe4 layers using polarized Raman scattering

Krämmer, C.; Lang, M.; Redinger, A.; Sachs, J.; Gao, C.; Kalt, H.; Siebentritt, S.; Hetterich, M.

We use polarization-resolved Raman spectroscopy to assess the crystal quality of epitaxial kesterite layers. It is demonstrated for the example of epitaxial Cu2ZnSnSe4 layers on GaAs(001) that ”standing” and ”lying” kesterite unit cell orientations (c’-axis parallel / perpendicular to the growth direction) can be distinguished by the application of Raman tensor analysis. From the appearance of characteristic intensity oscillations when the sample is rotated one can distinguish polycrystalline and epitaxial layers. The method can be transferred to kesterite layers oriented in any crystal direction and can shed light on the growth of such layers in general.

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DOI: 10.5445/IR/1000044076
DOI: 10.1364/OE.22.028240
Zitationen: 1
Web of Science
Zitationen: 1
Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Publikationstyp Zeitschriftenaufsatz
Jahr 2014
Sprache Englisch
Identifikator ISSN: 1094-4087
KITopen-ID: 1000044076
Erschienen in Optics Express
Band 22
Heft 23
Seiten 28240-28246
Bemerkung zur Veröffentlichung Gefördert durch den KIT-Publikationsfonds
Nachgewiesen in Web of Science
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