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DOI: 10.1063/1.4903233
Zitationen: 11
Web of Science
Zitationen: 12

Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

Fischer, Inga Anita; Chang, Li-Te; Sürgers, Christoph; Rolseth, Erlend; Reiter, Sebastian; Stefanov, Stefan; Chiussi, Stefano; Tang, Jianshi; Wang, Kang L.; Schulze, Joerg

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5 Ge 3C0.8/Al2O3/n+ -Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4 K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.

Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 2014
Sprache Englisch
Identifikator ISSN: 0003-6951
KITopen-ID: 1000050375
Erschienen in Applied Physics Letters
Band 105
Heft 22
Seiten Article Nr. 222408
Nachgewiesen in Web of Science
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