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Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

Fischer, Inga Anita; Chang, Li-Te; Sürgers, Christoph; Rolseth, Erlend; Reiter, Sebastian; Stefanov, Stefan; Chiussi, Stefano; Tang, Jianshi; Wang, Kang L.; Schulze, Joerg

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5 Ge 3C0.8/Al2O3/n+ -Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4 K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.

DOI: 10.1063/1.4903233
Zitationen: 17
Zitationen: 19
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2014
Sprache Englisch
Identifikator ISSN: 0003-6951
KITopen-ID: 1000050375
Erschienen in Applied Physics Letters
Verlag American Institute of Physics (AIP)
Band 105
Heft 22
Seiten Article Nr. 222408
Nachgewiesen in Scopus
Web of Science
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