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DOI: 10.1088/0268-1242/28/12/125002
Zitationen: 6
Web of Science
Zitationen: 6

Ferromagnetic Mn 5Ge3C0.8 contacts on Ge: work function and specific contact resistivity

Fischer, I.A.; Gebauer, J.; Rolseth, E.; Winkel, Patrick; Chang, L.-T.; Wang, K.L.; Sürgers, Christoph; Schulze, J.

We report on the study of the electrical and magnetic properties of Mn 5Ge3C0.8 contacts deposited on highly doped n-Ge (1 0 0) as a potentially complementary metal-oxide-semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn 5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal-oxide-semiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ω cm2 from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge.

Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 2013
Sprache Englisch
Identifikator ISSN: 0268-1242
KITopen-ID: 1000050395
Erschienen in Semiconductor Science and Technology
Band 28
Heft 12
Seiten Art.-Nr. 125002
Nachgewiesen in Web of Science
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