KIT | KIT-Bibliothek | Impressum | Datenschutz

Ferromagnetic Mn 5Ge3C0.8 contacts on Ge: work function and specific contact resistivity

Fischer, I. A.; Gebauer, J.; Rolseth, E.; Winkel, Patrick 1; Chang, L.-T.; Wang, K. L.; Sürgers, Christoph 1; Schulze, J.
1 Physikalisches Institut (PHI), Karlsruher Institut für Technologie (KIT)


We report on the study of the electrical and magnetic properties of Mn 5Ge3C0.8 contacts deposited on highly doped n-Ge (1 0 0) as a potentially complementary metal-oxide-semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn 5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal-oxide-semiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ω cm2 from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge.

DOI: 10.1088/0268-1242/28/12/125002
Zitationen: 10
Web of Science
Zitationen: 10
Zitationen: 10
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2013
Sprache Englisch
Identifikator ISSN: 0268-1242
KITopen-ID: 1000050395
Erschienen in Semiconductor Science and Technology
Verlag Institute of Physics Publishing Ltd (IOP Publishing Ltd)
Band 28
Heft 12
Seiten Art.-Nr. 125002
Nachgewiesen in Web of Science
KIT – Die Forschungsuniversität in der Helmholtz-Gemeinschaft
KITopen Landing Page