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Thermoelectric performance of Cu intercalated layered TiSe2 above 300 K

Bhatt, R.; Bhattacharya, S.; Patel, M.; Basu, R.; Singh, A.; Sürger, C. ORCID iD icon 1; Navaneethan, M.; Hayakawa, Y.; Aswal, D. K.; Gupta, S. K.
1 Physikalisches Institut (PHI), Karlsruher Institut für Technologie (KIT)


High temperature (300–650 K) thermoelectric performance of Cu intercalated Cu x TiSe2 (x = 0−0.11) material has been investigated. Cu intercalation transforms the p-type TiSe2 to n-type Cu xTiSe2 with significant Seebeck coefficient value saturating to ∼−90 μV/K (x ≥ 0.06) at 650 K. Spanning the entire range of Cu xTiSe2 samples, very low thermal conductivity has been observed which is attributed to the layered growth structure and rattling effect of weakly bound Cu atoms in the van der Waals gaps of TiSe2 layers. Figure of merit (ZT) value of 0.1 and 0.15 is achieved for pure TiSe2 and Cu 0.11TiSe2 samples, respectively, at 650 K. The 4-element thermoelectric generator fabricated using a combination of p-type TiSe2 and n-type Cu 0.11TiSe2 is designed, which gives an output power of 0.64 mW at 650 K.

DOI: 10.1063/1.4821798
Zitationen: 16
Zitationen: 17
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2013
Sprache Englisch
Identifikator ISSN: 0021-8979
KITopen-ID: 1000050397
Erschienen in Journal of Applied Physics
Verlag American Institute of Physics (AIP)
Band 114
Heft 11
Seiten Article Nr. 114509
Nachgewiesen in Scopus
Web of Science
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