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Low temperature thermoelectric properties of Cu intercalated TiSe2: a charge density wave material

Bhatt, Ranu; Basu, Ranita; Bhattacharya, S.; Singh, A.; Aswal, D. K.; Gupta, S. K.; Okram, G. S.; Ganesan, V.; Venkateshwarlu, D.; Sürgers, C. ORCID iD icon 1; Navaneethan, M.; Hayakawa, Y.
1 Physikalisches Institut (PHI), Karlsruher Institut für Technologie (KIT)


In this communication, we investigate the thermoelectric properties of a charge density wave material TiSe2 upon Cu intercalation. Polycrystalline Cu x TiSe2 (x=0–0.11) alloys were synthesized using solid state sintering process and their morphological and structural properties were investigated. The material grows in layered morphology and the c-lattice parameter increases linearly with x. The temperature dependent resistivity measured in the 300–5 K range, shows that increasing x leads to a systematic transition from charge density wave state to the metallic state. For x=0.11, the room temperature thermoelectric figure-of-merit is found to be 0.104, which is higher by seven orders in magnitude (i.e. 1.93×10−8) measured for pristine TiSe2 and comparable to the other reported thermoelectric materials. These results show that Cu x TiSe2 are a potential material for the low temperature thermoelectric applications.

DOI: 10.1007/s00339-012-7536-8
Zitationen: 25
Web of Science
Zitationen: 21
Zitationen: 25
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2013
Sprache Englisch
Identifikator ISSN: 0947-8396
KITopen-ID: 1000050400
Erschienen in Applied Physics A: Materials Science and Processing
Verlag Springer
Band 111
Heft 2
Seiten 465-470
Nachgewiesen in Dimensions
Web of Science
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