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Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current–voltage characteristics

Chauhan, A. K.; Aswal, D. K.; Koiry, S. P.; Gupta, S. K.; Yakhmi, J. V.; Sürgers, Christoph ORCID iD icon 1,2; Guerin, D.; Lenfant, S.; Vuillaume, D.
1 Physikalisches Institut (PHI), Karlsruher Institut für Technologie (KIT)
2 Center for Functional Nanostructures (CFN), Karlsruher Institut für Technologie (KIT)


We report the deposition of 3-aminopropyltrimethoxysilane (APTMS) multilayers on SiOx/Si(p(++)) substrates by a layer-by-layer self-assembly process. The multilayers were grafted in a glove box having nitrogen ambient with both humidity and oxygen contents < 1 ppm using APTMS solutions prepared in an anhydrous toluene. Deposition of the multilayers has been carried out as a function of solution concentration and grafting time. Characterization of the multilayers using static de-ionized water contact angle, ellipsometry, X-rayphotoelectron spectroscopy and atomic force microscope measurements revealed that self-assembling of the multilayers takes place in two distinct stages: (i) the first APTMS monolayer chemisorbs on a hydroxylated oxide surface by a silanization process and, (ii) the surface amino group of the first monolayer chemisorbs the hydrolyzed silane group of other APTMS molecules present in the solution, leading to the formation of a bilayer. The second stage is a self-replicating process that results in the layer-by-layer self-assembly of the multilayers with trapped NH3+ ions. The current-voltage characteristics of the multilayers exhibit a hysteresis effect along with a negative differential resistance, suggesting their potential application in the molecular memory devices. ... mehr

DOI: 10.1007/s00339-007-4336-7
Zitationen: 125
Zitationen: 119
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2008
Sprache Englisch
Identifikator ISSN: 0947-8396
KITopen-ID: 1000050499
Erschienen in Applied Physics A: Materials Science and Processing
Verlag Springer
Band 90
Heft 3
Seiten 581-589
Nachgewiesen in Scopus
Web of Science
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