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Mn5Ge3C0.8 Contacts for Spin Injection Into Ge

Fischer, Inga Anita; Sürgers, Christoph 1; Petit, Matthieu; Thanh, Vinh Le; Schulze, Joerg
1 Physikalisches Institut (PHI), Karlsruher Institut für Technologie (KIT)


We investigate the properties of Mn5Ge3C 0.8 contacts on Ge (100) and (111) with varying doping type and doping concentrations with the aim of fabricating low-resistance contacts. Specific contact resistivities on Ge (100) are very high in all cases. The lowest specific contact resistivity (1.25 · 10-4 Ω ·cm2) was obtained for Mn5Ge3C 0.8 contacts on n++-Ge (111) with ND = 1·1020 cm-3. We discuss means to further reduce specific contact resistivities. © The Electrochemical Society.

DOI: 10.1149/05809.0029ecst
Zitationen: 1
Zitationen: 1
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2013
Sprache Englisch
Identifikator ISSN: 1938-5862
KITopen-ID: 1000050536
Erschienen in ECS Transactions
Verlag Electrochemical Society
Band 58
Heft 9
Seiten 29-36
Nachgewiesen in Scopus
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