Mn5Ge3C0.8 Contacts for Spin Injection Into Ge

We investigate the properties of Mn5Ge3C 0.8 contacts on Ge (100) and (111) with varying doping type and doping concentrations with the aim of fabricating low-resistance contacts. Specific contact resistivities on Ge (100) are very high in all cases. The lowest specific contact resistivity (1.25 · 10-4 Ω ·cm2) was obtained for Mn5Ge3C 0.8 contacts on n++-Ge (111) with ND = 1·1020 cm-3. We discuss means to further reduce specific contact resistivities. © The Electrochemical Society.