We investigate the properties of Mn5Ge3C 0.8 contacts on Ge (100) and (111) with varying doping type and doping concentrations with the aim of fabricating low-resistance contacts. Specific contact resistivities on Ge (100) are very high in all cases. The lowest specific contact resistivity (1.25 · 10-4 Ω ·cm2) was obtained for Mn5Ge3C 0.8 contacts on n++-Ge (111) with ND = 1·1020 cm-3. We discuss means to further reduce specific contact resistivities. © The Electrochemical Society.