KIT | KIT-Bibliothek | Impressum | Datenschutz

Mn5Ge3C0.8 Contacts for Spin Injection Into Ge

Fischer, Inga Anita; Sürgers, Christoph; Petit, Matthieu; Thanh, Vinh Le; Schulze, Joerg

We investigate the properties of Mn5Ge3C 0.8 contacts on Ge (100) and (111) with varying doping type and doping concentrations with the aim of fabricating low-resistance contacts. Specific contact resistivities on Ge (100) are very high in all cases. The lowest specific contact resistivity (1.25 · 10-4 Ω ·cm2) was obtained for Mn5Ge3C 0.8 contacts on n++-Ge (111) with ND = 1·1020 cm-3. We discuss means to further reduce specific contact resistivities. © The Electrochemical Society.

Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 2013
Sprache Englisch
Identifikator ISSN: 1938-5862
KITopen-ID: 1000050536
Erschienen in ECS Transactions
Band 58
Heft 9
Seiten 29-36
Nachgewiesen in Scopus
KIT – Die Forschungsuniversität in der Helmholtz-Gemeinschaft
KITopen Landing Page