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Etching nano-holes in silicon carbide using catalytic platinum nano-particles

Moyen, E.; Wulfhekel, W. 1; Lee, W.; Leycuras, A.; Nielsch, K.; Goesele, U.; Hanbuecken, M.
1 Physikalisches Institut (PHI), Karlsruher Institut für Technologie (KIT)


The catalytic reaction of platinum during a hydrogen etching process has been used to perform controlled vertical nanopatterning of silicon carbide substrates. A first set of experiments was performed with platinum powder randomly distributed on the SiC surface. Subsequent hydrogen etching in a hot wall reactor caused local atomic hydrogen production at the catalyst resulting in local SiC etching and hole formation. Secondly, a highly regular and monosized distribution of Pt was obtained by sputter deposition of Pt through an Au membrane serving as a contact mask. After the lift-off of the mask, the hydrogen etching revealed the onset of well-controlled vertical patterned holes on the SiC surface.

DOI: 10.1007/s00339-006-3639-4
Zitationen: 11
Web of Science
Zitationen: 10
Zitationen: 9
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 2006
Sprache Englisch
Identifikator ISSN: 0947-8396
KITopen-ID: 1000053845
Erschienen in Applied Physics A: Materials Science and Processing
Verlag Springer
Band 84
Heft 4
Seiten 369-371
Nachgewiesen in Scopus
Web of Science
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