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New Concepts For Controlled Homoepitaxy

Rosenfeld, G.; Lipkin, N.N.; Wulfhekel, W.; Kliewer, J.; Morgenstern, K.; Poelsema, B.; Comsa, G.

Abstract: On the basis of a kinetic growth model we discuss new methods to grow atomically flat homoepitaxial layers in a controlled way. The underlying principle of these methods is to change the growth parameters during growth of an atomic layer in such a way that nucleation on top of a growing layer is suppressed, and thus, layer-by-layer growth is achieved. Experimentally, this can be realized by changing the substrate temperature or deposition rate during monolayer growth in a well-defined way. The same can be achieved at constant temperature and deposition rate by simultaneous ion bombardment during the early stages of growth of a monolayer, or by adding suitable surfactants to the system. Model experiments on Ag(lll) and on Cu(lll) using thermal energy atom scattering and scanning tunneling microscopy demonstrate the success of these methods.


Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 1995
Sprache Englisch
Identifikator DOI: 10.1007/BF01540247
ISSN: 0947-8396
KITopen ID: 1000053849
Erschienen in Applied Physics A: Materials Science and Processing
Band 61
Heft 5
Seiten 455-466
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