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New Concepts For Controlled Homoepitaxy

Rosenfeld, G.; Lipkin, N. N.; Wulfhekel, W.; Kliewer, J.; Morgenstern, K.; Poelsema, B.; Comsa, G.

Abstract:

On the basis of a kinetic growth model we discuss new methods to grow atomically flat homoepitaxial layers in a controlled way. The underlying principle of these methods is to change the growth parameters during growth of an atomic layer in such a way that nucleation on top of a growing layer is suppressed, and thus, layer-by-layer growth is achieved. Experimentally, this can be realized by changing the substrate temperature or deposition rate during monolayer growth in a well-defined way. The same can be achieved at constant temperature and deposition rate by simultaneous ion bombardment during the early stages of growth of a monolayer, or by adding suitable surfactants to the system. Model experiments on Ag(lll) and on Cu(lll) using thermal energy atom scattering and scanning tunneling microscopy demonstrate the success of these methods.

Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 1995
Sprache Englisch
Identifikator ISSN: 0947-8396
KITopen-ID: 1000053849
Erschienen in Applied Physics A: Materials Science and Processing
Verlag Springer
Band 61
Heft 5
Seiten 455-466
Nachgewiesen in Web of Science
Dimensions
Scopus
OpenAlex
Globale Ziele für nachhaltige Entwicklung Ziel 7 – Bezahlbare und saubere Energie

Originalveröffentlichung
DOI: 10.1007/BF01540247
Scopus
Zitationen: 81
Web of Science
Zitationen: 74
Dimensions
Zitationen: 79
Seitenaufrufe: 139
seit 08.05.2018
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