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Manipulation of growth modes in heteroepitaxy: Ni/Cu(111)

Wulfhekel, W.; Beckmann, I.; Lipkin, N. N.; Rosenfeld, G.; Poelsema, B.; Comsa, G.

Abstract: Growth manipulation methods, which have been successfully used to improve the growth of homoepitaxial films, are applied to molecular beam epitaxy of the heteroepitaxial system Ni/Cu(111). The procedures applied are temperature reduction during nucleation and pulsed ion bombardment during deposition. While the first does not lead to smoother films, the ion beam assisted growth is successful in reducing the film roughness. (C) 1996 American Institute of Physics.

Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 1996
Sprache Englisch
Identifikator DOI: 10.1063/1.117222
ISSN: 0003-6951
KITopen ID: 1000053852
Erschienen in Applied Physics Letters
Band 69
Heft 23
Seiten 3492--3494
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