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Dynamics and energetics of Si ad-dimers and ad-dimer clusters on Ge(100)

Wulfhekel, W.; Hattink, B. J.; Zandvliet, H. J. W.; Rosenfeld, G.; Poelsema, B.

The early stages of silicon heteroepitaxial growth on Ge(100) have been studied with scanning tunneling microscopy. Four different Si ad-dimer configurations as well as metastable strings of ad-dimers on Ge(100) have been experimentally identified using dual bias imaging. The metastable strings are aligned along [130] directions and play an important role in binding of Si atoms and nucleation of Si islands. Various dynamic events, such as the collapse of metastable strings into islands and diffusion events of ad-dimers both along and across substrate dimer rows, have been observed.

DOI: 10.1103/PhysRevLett.79.2494
Zitationen: 37
Web of Science
Zitationen: 34
Zitationen: 35
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 1997
Sprache Englisch
Identifikator ISSN: 0031-9007
KITopen-ID: 1000053856
Erschienen in Physical Review Letters
Verlag American Physical Society (APS)
Band 79
Heft 13
Seiten 2494-2497
Nachgewiesen in Dimensions
Web of Science
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