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Smooth growth fronts in Si/Ge heteroepitaxy by kinetic growth manipulation

Wulfhekel, W.; Zandvliet, H. J. W.; Hattink, B. J.; Rosenfeld, G.; Comsa, G.; Poelsema, B.

A promising route for growing atomically flat Si on Ge(100) is described. The key to this achievement is the control of growth kinetics on an atomic level. We have identified the cause for the development of rough growth fronts: the descent of atoms across steps, a prerequisite fur prolonged layer-by-layer growth, is strongly suppressed at double steps. The developedprocedure for smooth growth avoids the formation of these double steps. The approach can be applied at low temperature (<550 K) and thus inherently avoids ill chemical definition of the interface due to intermixing. It is expected to be generally applicable for epitaxy of pure Si and Ge on both Ge(100) and Si(100) substrates. [S0163-1829(98)03148-8].

DOI: 10.1103/PhysRevB.58.15359
Zitationen: 7
Web of Science
Zitationen: 7
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsjahr 1998
Sprache Englisch
Identifikator ISSN: 1098-0121
KITopen-ID: 1000053865
Erschienen in Physical Review B - Condensed Matter and Materials Physics
Band 58
Heft 23
Seiten 15359-15362
Nachgewiesen in Web of Science
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