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Spontaneous formation of an ordered c(4x2)-(2x1) domain pattern on Ge(001)

Zandvliet, H. J. W.; Swartzentruber, B. S.; Wulfhekel, W.; Hattink, B. J.; Poelsema, B.

Scanning-tunneling-microscopy measurements of Ge(001) reveal the presence of an ordered domain pattern consisting of c(4X2) and (2X1) domains arranged in stripes with a width of several dimer row spacings, oriented along the dimer rows. We suggest that the existence of a soft domain wall between the domains combined with a difference in the stress component along the dimer bond for the (2X1) and c(4X2) domains, respectively, can conspire to produce such an ordered domain phase. A simple model based on strain relaxation explains the observed size of the domain pattern.

Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 1998
Sprache Englisch
Identifikator DOI: 10.1103/PhysRevB.57.R6803
ISSN: 1098-0121
KITopen ID: 1000053867
Erschienen in Physical Review B - Condensed Matter and Materials Physics
Band 57
Heft 12
Seiten R6803-R6806
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