| Zugehörige Institution(en) am KIT | Institut für Hochfrequenztechnik und Elektronik (IHE) |
| Publikationstyp | Proceedingsbeitrag |
| Publikationsjahr | 2015 |
| Sprache | Englisch |
| Identifikator | ISBN: 978-147997473-3 KITopen-ID: 1000054599 |
| Erschienen in | Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015 IEEE International Conference on |
| Verlag | Institute of Electrical and Electronics Engineers (IEEE) |
| Seiten | 1-4 |
| Schlagwörter | III-V semiconductors;MIMIC;MMIC;frequency multipliers;gallium arsenide;high electron mobility transistors;indoor communication;GaAs;MMIC chipset;active millimeter-wave monolithic integrated circuits;analog front end;frequency 270 GHz to 314 GHz;frequency 292 GHz to 314 GHz;frequency 300 GHz;gain 11.4 dB;high data rate indoor wireless communication;local oscillator frequency multiplier;metamorphic high electron mobility transistor technology;Gain;MMICs;Mixers;Radio frequency;Receivers;Wireless communication;MMICs;Terahertz wireless communication;millimeter-wave amplification;millimeter-wave frequency conversion |
| Nachgewiesen in | OpenAlex Dimensions Scopus |
| Globale Ziele für nachhaltige Entwicklung |