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Originalveröffentlichung
DOI: 10.1109/COMCAS.2015.7360494
Scopus
Zitationen: 8

MMIC chipset for 300 GHz indoor wireless communication

Kallfass, Ingmar; Harati, Parisa; Dan, Iulia; Antes, Jochen; Boes, Florian; Rey, Sebastian; Merkle, Thomas; Wagner, Sandrine; Massler, Hermann; Tessmann, Axel; Leuther, Arnulf

Abstract:
This contribution presents a full chip set dedicated to high data rate indoor wireless communication at a carrier frequency of 300 GHz. The analog frontend consists of a three-chip solution, namely a transmitter, receiver and local oscillator frequency multiplier. The active millimeter-wave monolithic integrated circuits are realized in a GaAs-based metamorphic high electron mobility transistor technology. The transmitter MMIC achieves a maximum output power of 3.6 dBm and an RF frequency range of 270 to 314 GHz. The receiver MMIC shows 11.4 dB conversion gain without IF amplification in an RF frequency range from 292 to 314 GHz.


Zugehörige Institution(en) am KIT Institut für Hochfrequenztechnik und Elektronik (IHE)
Publikationstyp Proceedingsbeitrag
Jahr 2015
Sprache Englisch
Identifikator ISBN: 978-147997473-3
KITopen ID: 1000054599
Erschienen in Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015 IEEE International Conference on
Verlag IEEE
Seiten 1-4
Schlagworte III-V semiconductors;MIMIC;MMIC;frequency multipliers;gallium arsenide;high electron mobility transistors;indoor communication;GaAs;MMIC chipset;active millimeter-wave monolithic integrated circuits;analog front end;frequency 270 GHz to 314 GHz;frequency 292 GHz to 314 GHz;frequency 300 GHz;gain 11.4 dB;high data rate indoor wireless communication;local oscillator frequency multiplier;metamorphic high electron mobility transistor technology;Gain;MMICs;Mixers;Radio frequency;Receivers;Wireless communication;MMICs;Terahertz wireless communication;millimeter-wave amplification;millimeter-wave frequency conversion
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