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Silicon-plasmonic internal-photoemission detector for 40  Gbit/s data reception

Muehlbrandt, S.; Melikyan, A.; Harter, T.; Köhnle, K.; Muslija, A.; Vincze, P.; Wolf, S.; Jakobs, P.; Fedoryshyn, Y.; Freude, J.; Leuthold, J.; Koos, C.; Kohl, M.

Abstract (englisch):
Silicon-plasmonics enables the fabrication of active photonic circuits in CMOS technology with unprecedented operation speed and integration density. Regarding applications in chip-level optical interconnects, fast and efficient plasmonic photodetectors with ultrasmall footprints are of special interest. A particularly promising approach to silicon-plasmonic photodetection is based on internal photoemission (IPE), which exploits intrinsic absorption in plasmonic waveguides at the metal–dielectric interface. However, while IPE plasmonic photodetectors have already been demonstrated, their performance is still far below that of conventional high-speed photodiodes. In this paper, we demonstrate a novel class of IPE devices with performance parameters comparable to those of state-of-the-art photodiodes while maintaining footprints below 1  μm 2 . The structures are based on asymmetric metal–semiconductor–metal waveguides with a width of less than 75 nm. We measure record-high sensitivities of up to 0.12 A/W at a wavelength of 1550 nm. The detectors exhibit opto-electronic bandwidths of at least 40 GHz. We demonstrate reception of on–of ... mehr

Zugehörige Institution(en) am KIT Institut für Mikrostrukturtechnik (IMT)
Institut für Nanotechnologie (INT)
Karlsruhe Nano Micro Facility (KNMF)
Institut für Photonik und Quantenelektronik (IPQ)
Publikationstyp Zeitschriftenaufsatz
Jahr 2016
Sprache Englisch
Identifikator DOI: 10.1364/OPTICA.3.000741
ISSN: 2334-2536
URN: urn:nbn:de:swb:90-569966
KITopen ID: 1000056996
HGF-Programm 43.23.03; LK 01
Erschienen in Optica
Band 3
Heft 7
Seiten 741-747
Bemerkung zur Veröffentlichung Gefördert durch den KIT-Publikationsfonds
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