Quantum Transport and Shot Noise in Graphene-Boron Nitride Heterostructures
Abstract (englisch):
This thesis presents experiments on the electronic transport properties of mesoscopic graphene samples at low temperature. Due to the residue free encapsulation in hexagonal boron nitride, the mean free path of charge carriers is in the order of the geometric sample dimensions. High frequency shot noise was measured in parallel to the conductance under various experimental conditions, including proximity induced superconductivity and high magnetic fields.
| Zugehörige Institution(en) am KIT | Institut für Nanotechnologie (INT) |
| Publikationstyp | Hochschulschrift |
| Publikationsjahr | 2016 |
| Sprache | Englisch |
| Identifikator | urn:nbn:de:swb:90-590538 KITopen-ID: 1000059053 |
| HGF-Programm | 43.21.02 (POF III, LK 01) Quantum Properties of Nanostructures |
| Verlag | Karlsruher Institut für Technologie (KIT) |
| Umfang | III, 99 S. |
| Art der Arbeit | Dissertation |
| Fakultät | Fakultät für Physik (PHYSIK) |
| Institut | Institut für Nanotechnologie (INT) |
| Prüfungsdaten | 22.04.2016 |
| Schlagwörter | graphene, hexagonal boron nitride, high frequency shot noise, Dirac fermion optics, proximity-induced superconductivity |
| Nachgewiesen in | OpenAlex |
| Referent/Betreuer | Löhneysen, H. von |