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Quantum Transport and Shot Noise in Graphene-Boron Nitride Heterostructures

Mohrmann, Jens

Abstract (englisch):
This thesis presents experiments on the electronic transport properties of mesoscopic graphene samples at low temperature. Due to the residue free encapsulation in hexagonal boron nitride, the mean free path of charge carriers is in the order of the geometric sample dimensions. High frequency shot noise was measured in parallel to the conductance under various experimental conditions, including proximity induced superconductivity and high magnetic fields.

Volltext §
DOI: 10.5445/IR/1000059053
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Nanotechnologie (INT)
Publikationstyp Hochschulschrift
Publikationsjahr 2016
Sprache Englisch
Identifikator urn:nbn:de:swb:90-590538
KITopen-ID: 1000059053
HGF-Programm 43.21.02 (POF III, LK 01) Quantum Properties of Nanostructures
Verlag Karlsruher Institut für Technologie (KIT)
Umfang III, 99 S.
Art der Arbeit Dissertation
Fakultät Fakultät für Physik (PHYSIK)
Institut Institut für Nanotechnologie (INT)
Prüfungsdaten 22.04.2016
Referent/Betreuer Prof. H. von Löhneysen
Schlagwörter graphene, hexagonal boron nitride, high frequency shot noise, Dirac fermion optics, proximity-induced superconductivity
KIT – Die Forschungsuniversität in der Helmholtz-Gemeinschaft
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