In the present work, we investigate light-management concepts applied subsequent to the passivation of the Si wafer of planar Si heterojunction solar cells. As a first concept, we apply amorphous silicon based nanophotonic textures at the back side of the Si wafer to realize efficient light trapping. As a second concept, we use a nanoimprint lithography based front side anti-reflection coating to improve the incoupling of light into the solar cell absorber. Both concepts allow for efficient improvements in the short-circuit current densities without degrading the planar passivation layers. As the highlight of this work, we demonstrate planar silicon heterojunction solar cells (thickness ∼ 280 μm) with high passivation quality as well as a short-circuit current density of 38.8 mA/cm2.