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Garnet-type Li₇La₃Zr₂O₁₂ solid electrolyte thin films grown by Co₂-laser assisted CVD for all-solid-state batteries

Loho, Christoph; Djenadic, Ruzika; Bruns, Michael; Clemens, Oliver; Hahn, Horst

Abstract (englisch):
The detailed characterization of garnet-type Li-ion conducting Li7La3Zr2O12 (LLZO) solid electrolyte thin films grown by novel CO2-laser assisted chemical vapor deposition (LA-CVD) is reported. A deposition process parameter study reveals that an optimal combination of deposition temperature and oxygen partial pressure is essential to obtain high quality tetragonal LLZO thin films. The polycrystalline tetragonal LLZO films grown on platinum have a dense and homogeneous microstructure and are free of cracks. A total lithium ion conductivity of 4.2·10−6 S·cm−1 at room temperature, with an activation energy of 0.50 eV, is achieved. This is the highest total lithium ion conductivity value reported for tetragonal LLZO thin films so far, being about one order of magnitude higher than previously reported values for tetragonal LLZO thin films prepared by sputtering and pulsed laser deposition. The results of this study suggest that the tetragonal LLZO thin films grown by LA-CVD are applicable for the use in all-solid-state thin film lithium ion batteries.


Zugehörige Institution(en) am KIT Helmholtz-Institut Ulm (HIU)
Institut für Angewandte Materialien - Energiespeichersysteme (IAM-ESS)
Institut für Nanotechnologie (INT)
Karlsruhe Nano Micro Facility (KNMF)
Publikationstyp Zeitschriftenaufsatz
Jahr 2017
Sprache Englisch
Identifikator DOI: 10.1149/2.0201701jes
ISSN: 0013-4651, 0096-4743, 0096-4786, 1945-7111
KITopen ID: 1000062770
HGF-Programm 37.01.01; LK 01
Erschienen in Journal of the Electrochemical Society
Band 164
Heft 1
Seiten A6131-A6139
Lizenz CC BY-NC-ND 4.0: Creative Commons Namensnennung – Nicht kommerziell – Keine Bearbeitungen 4.0 International
Schlagworte All-solid-state lithium ion battery, Chemical vapor deposition, Garnet-type Li7La3Zr2O12, Ionic conductivity, Solid electrolyte, Thin film
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