Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
Benoit, M.; Mendizabal, J. Bilbao de; Casse, G.; Chen, H.; Chen, K.; Bello, F. A. Di; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Lanni, F.; Liu, H.; Meloni, F.; Meng, L.; Miucci, A.; Muenstermann, D.; Nessi, M.; Perić, I.
1; Rimoldi, M.;
1; Rimoldi, M.; Abstract (englisch):
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
| Zugehörige Institution(en) am KIT | Institut für Prozessdatenverarbeitung und Elektronik (IPE) |
| Publikationstyp | Zeitschriftenaufsatz |
| Publikationsjahr | 2016 |
| Sprache | Englisch |
| Identifikator | ISSN: 1748-0221 KITopen-ID: 1000064398 |
| HGF-Programm | 54.02.03 (POF III, LK 01) ASICs und Integrationstechnologien |
| Erschienen in | Journal of Instrumentation |
| Verlag | Institute of Physics Publishing Ltd (IOP Publishing Ltd) |
| Band | 11 |
| Heft | 07 |
| Seiten | P07019 |
| Nachgewiesen in | Dimensions Web of Science |