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Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.; Chen, H.; Chen, K.; Bello, F.A. Di; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Lanni, F.; Liu, H.; Meloni, F.; Meng, L.; Miucci, A.; Muenstermann, D.; Nessi, M.; Perić, I.; Rimoldi, M.; ... mehr



Abstract (englisch): Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.


Zugehörige Institution(en) am KIT Institut für Prozessdatenverarbeitung und Elektronik (IPE)
Publikationstyp Zeitschriftenaufsatz
Jahr 2016
Sprache Englisch
Identifikator DOI: 10.1088/1748-0221/11/07/P07019
ISSN: 1748-0221
KITopen ID: 1000064398
HGF-Programm 54.02.03; LK 01
Erschienen in Journal of Instrumentation
Band 11
Heft 07
Seiten P07019
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