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Study on silicon nanopillars with ultralow broadband reflectivity via maskless reactive ion etching at room temperature

Huang, Yi; Yan, Wensheng; Tan, Xinyu; He, Lijun

Abstract (englisch):
Nanostructured silicon with low surface reflectivity has important application prospects in a wide range. We fabricate crystalline silicon nanopillars with ultralow broadband reflectivity via maskless reactive ion etching at room temperature. The measurements show that the silicon nanopillars are in nano-scale diameter and micron-scale height with tip ends, which show extremely powerful antireflection capability. The silicon nanopillars with the heights of 5 μm and 7 μm demonstrate ultralow weighted average reflectivity of 0.80% and 0.40%, respectively, in a wide wavelength range of 300–1030 nm. Additional SiNx coating reduces the reflectivity to 0.09%. The two-dimensional weighted average reflectivity as function of angle of incidence and wavelength is measured, which shows low sensitivity to angle of incidence in the range of 0°–70°. The calculated wavelength dependent reflectance is in good agreement with the measured result in the range of 300–1030 nm.


Zugehörige Institution(en) am KIT Institut für Mikrostrukturtechnik (IMT)
Publikationstyp Zeitschriftenaufsatz
Jahr 2017
Sprache Englisch
Identifikator DOI: 10.1016/j.mseb.2017.06.013
ISSN: 0921-5107, 1873-4944
KITopen ID: 1000071761
HGF-Programm 43.23.04; LK 01
Erschienen in Materials science and engineering / B
Band 223
Seiten 153–158
Bemerkung zur Veröffentlichung http://www.sciencedirect.com/science/article/pii/S0921510717301502
Schlagworte Silicon nanopillars; Ultralow broadband reflectivity; Room-temperature fabrication.
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