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Novel hybrid Nb/InAs/Nb step junctions

Lachenmann, S. G.; Kastalsky, A.; Friedrich, I.; Förster, A.; Ustinov, Alexey V.; Uhlisch, D.

We present experimental results for novel superconductor/semiconductor heterostructure hybrid systems, which rely on the use of the two-dimensional electron gas at the surface of p-type InAs. The surface channel is made in an InAs step between Nb contacts. Such a geometry allows fabrication of short weak links (≈100 nm) as well as realization of a variety of heterostructure potential profiles along the channel since the latter is oriented perpendicular to the growth direction of the heterostructure. By measuring the current-voltage characteristics at 4.2 K, we observe supercurrent, subharmonic gap structure, as well as above gap structure and excess current. The junction transparency is estimated to exceed 70%.

Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 1996
Sprache Englisch
Identifikator ISSN: 0011-4626, 1572-9486, 0009-0700, 0011-4226
KITopen ID: 1000075680
Erschienen in Czechoslovak journal of physics
Band 46
Heft S2
Seiten 659–660
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