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Analysis of testing the single-fluxon dynamics in a long Josephson junction by a dissipative spot

Malomed, Boris A.; Ustinov, Alexey V.


A change of the I-V characteristics of a long Josephson junction, operating in the zero-field single-fluxon regime, under the action of a ‘‘hot spot’’ (e.g., created by a focused electron beam) is calculated analytically by means of the perturbation theory, and also investigated numerically. The change of the average voltage at a given value of the bias current is calculated as a function of the hot spot-position. The overlap Josephson junction geometry is considered in detail, while the inline one is briefly discussed. A good accord between analytical and numerical results is found. The results are relevant for the interpretation of the low-temperature scanning electron microscopy experiments on imaging the fluxon dynamic states in a long Josephson junction.

DOI: 10.1103/PhysRevB.49.13024
Zitationen: 15
Web of Science
Zitationen: 16
Zitationen: 13
Zugehörige Institution(en) am KIT Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 05.1994
Sprache Englisch
Identifikator ISSN: 0163-1829, 0556-2805, 1094-1622, 1095-3795, 1098-0121, 1550-235X, 2469-9950, 2469-9969
KITopen-ID: 1000077325
Erschienen in Physical review / B
Verlag American Physical Society (APS)
Band 49
Heft 18
Seiten 13024-13029
Nachgewiesen in Dimensions
Web of Science
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