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Verlagsausgabe
DOI: 10.5445/IR/1000079240
Frei zugänglich ab 01.04.2019
Originalveröffentlichung
DOI: 10.1364/OE.26.000220
Scopus
Zitationen: 9
Web of Science
Zitationen: 8

Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

Wolf, S.; Zwickel, H.; Kieninger, C.; Lauermann, M.; Hartmann, W.; Kutuvantavida, Y.; Freude, W.; Randel, S.; Koos, C.

Abstract:
We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a π-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit.


Zugehörige Institution(en) am KIT Institut für Mikrostrukturtechnik (IMT)
Institut für Photonik und Quantenelektronik (IPQ)
Publikationstyp Zeitschriftenaufsatz
Jahr 2018
Sprache Englisch
Identifikator ISSN: 1094-4087
URN: urn:nbn:de:swb:90-792409
KITopen-ID: 1000079240
HGF-Programm 43.23.03 (POF III, LK 01)
Erschienen in Optics express
Band 26
Heft 1
Seiten 220-232
Nachgewiesen in Scopus
Web of Science
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