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DOI: 10.5445/IR/1000081269
Veröffentlicht am 27.03.2018

Properties of the Back Contact Interface for Non-Vacuum Deposited Precursor-Based Cu(In,Ga)Se₂ Solar Cells

Haug, Annegret Veronika

Abstract (englisch):
In this work two possibilities for steps on the way towards cost-efficient solar cells are presented. Non-vacuum processes for the absorber fabrication are implemented and an idea how thinner absorber layers can still show relatively high conversion efficiencies is substantiated.
In order to investigate the interface properties of absorbers built with non-vacuum processes a basic non-vacuum selenisation process has been developed initially. The selenisation set-up has been designed and built up and the corresponding process has been optimized.
As a next step the molybdenum selenide formation and the influence of the changed selenium partial pressure and the precursor layers on it has been investigated: Both the molybdenum fabrication process (especially sputter pressure) and the selenisation (especially substrate temperature) were found to influence the MoSe2 formation. For sputtered precursors MoSe2 was formed during the selenisation. For doctor bladed precursors made from metal salts with ethylcellulose no molybdenum selenide formation has been observed. During the formation of the CIGS absorber layer a carbon layer was left be ... mehr

Zugehörige Institution(en) am KIT Institut für Angewandte Physik (APH)
Publikationstyp Hochschulschrift
Jahr 2018
Sprache Englisch
Identifikator URN: urn:nbn:de:swb:90-812693
KITopen ID: 1000081269
Verlag Karlsruhe
Umfang 168 S.
Abschlussart Dissertation
Fakultät Fakultät für Physik (PHYSIK)
Institut Institut für Angewandte Physik (APH)
Prüfungsdatum 28.04.2017
Referent/Betreuer Prof. H. Kalt
Schlagworte solar cells, photovoltaics, thin film, chalcopyrite, recombination, selenisation
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