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DOI: 10.5445/IR/1000081512
Veröffentlicht am 03.04.2018

Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection

Benfante, Antonio; Giambra, Marco A.; Pernice, Riccardo; Stivala, Salvatore; Calandra, Enrico; Parisi, Antonino; Cino, Alfonso C.; Dehm, Simone; Danneau, Romain; Krupke, Ralph; Busacca, Alessandro C.

In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVDgrown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.

Zugehörige Institution(en) am KIT Institut für Nanotechnologie (INT)
Publikationstyp Zeitschriftenaufsatz
Jahr 2018
Sprache Englisch
Identifikator ISSN: 1943-0655
URN: urn:nbn:de:swb:90-815127
KITopen ID: 1000081512
HGF-Programm 43.21.03; LK 01
Erschienen in IEEE photonics journal
Band 10
Heft 2
Seiten Art.Nr. 6801407
Schlagworte Graphene, graphene field effect transistors, infrared detectors, microwave transistors
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