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Verlagsausgabe
DOI: 10.5445/IR/1000083372
Veröffentlicht am 12.06.2018

Correlating the nanostructure of Al-oxide with deposition conditions and dielectric contributions of two-level systems in perspective of superconducting quantum circuits

Fritz, S.; Seiler, A.; Radtke, L.; Schneider, R.; Weides, M.; Weiß, G.; Gerthsen, D.

Abstract:
This work is concerned with Al/Al-oxide(AlOx)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree assigned to the presence and properties of two-level tunneling systems in the amorphous AlOx tunnel barrier. The study is focused on the correlation of the fabrication conditions, nanostructural and nanochemical properties and the occurrence of two-level tunneling systems with particular emphasis on the AlOx-layer. Electron-beam evaporation with two different processes and sputter deposition were used for structure fabrication, and the effect of illumination by ultraviolet light during Al-oxide formation is elucidated. Characterization was performed by analytical transmission electron microscopy and low-temperature dielectric measurements. We show that the fabrication conditions have a strong impact on the nanostructural and nanochemical properties of the layer systems and the properties of two-level tunneling systems. Based on the understanding of the observed structural characteristics, routes are su ... mehr


Zugehörige Institution(en) am KIT Laboratorium für Elektronenmikroskopie (LEM)
Physikalisches Institut (PHI)
Publikationstyp Zeitschriftenaufsatz
Jahr 2018
Sprache Englisch
Identifikator ISSN: 2045-2322
URN: urn:nbn:de:swb:90-833724
KITopen-ID: 1000083372
Erschienen in Scientific reports
Band 8
Heft 1
Seiten 7956/1-11
Bemerkung zur Veröffentlichung Gefördert durch den KIT-Publikationsfonds
Vorab online veröffentlicht am 21.05.2018
Nachgewiesen in Web of Science
Scopus
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