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Layout influence on microwave performance of graphene field effect transistors

Giambra, M. A.; Benfante, A.; Zeiss, L.; Pernice, R.; Miseikis, V.; Pernice, W. H. P.; Jang, M. H.; Ahn, J.-H.; Cino, A. C.; Stivala, S.; Calandra, E.; Busacca, A. C.; Danneau, R. 1
1 Institut für Nanotechnologie (INT), Karlsruher Institut für Technologie (KIT)


The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gate-length space which maximises the microwave performance.

Verlagsausgabe §
DOI: 10.5445/IR/1000085596
Veröffentlicht am 10.01.2022
DOI: 10.1049/el.2018.5113
Zitationen: 5
Web of Science
Zitationen: 6
Zitationen: 6
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Nanotechnologie (INT)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 08.2018
Sprache Englisch
Identifikator ISSN: 0013-5194, 1350-911X
KITopen-ID: 1000085596
HGF-Programm 43.21.03 (POF III, LK 01) Carbon Nanosystems
Erschienen in Electronics letters
Verlag Institution of Engineering and Technology (IET)
Band 54
Heft 16
Seiten 984-986
Nachgewiesen in Scopus
Web of Science
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