Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
Anders, J.; Benoit, M.; Braccini, S.; Casanova, R.; Chen, H.; Chen, K.; Bello, F. A. D.; Fehr, A.; Ferrere, D.; Forshaw, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.;
Abstract:
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7MeV Cyclotron at Bern Inselspital.
| Zugehörige Institution(en) am KIT | Institut für Prozessdatenverarbeitung und Elektronik (IPE) |
| Publikationstyp | Zeitschriftenaufsatz |
| Publikationsjahr | 2018 |
| Sprache | Englisch |
| Identifikator | ISSN: 1748-0221 KITopen-ID: 1000087876 |
| HGF-Programm | 54.02.03 (POF III, LK 01) ASICs und Integrationstechnologien |
| Erschienen in | Journal of Instrumentation |
| Verlag | Institute of Physics Publishing Ltd (IOP Publishing Ltd) |
| Band | 13 |
| Heft | 10 |
| Seiten | Art. Nr.: P10004 |
| Schlagwörter | Particle tracking detectors (Solid-state detectors), Radiation-hard detectors, Solid state detectors |
| Nachgewiesen in | Scopus Web of Science Dimensions |