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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

Anders, J.; Benoit, M.; Braccini, S.; Casanova, R.; Chen, H.; Chen, K.; Bello, F. A. D.; Fehr, A.; Ferrere, D.; Forshaw, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Nessi, M.; ... mehr

Abstract:
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7MeV Cyclotron at Bern Inselspital.

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Originalveröffentlichung
DOI: 10.1088/1748-0221/13/10/P10004
Scopus
Zitationen: 3
Web of Science
Zitationen: 3
Zugehörige Institution(en) am KIT Institut für Prozessdatenverarbeitung und Elektronik (IPE)
Publikationstyp Zeitschriftenaufsatz
Jahr 2018
Sprache Englisch
Identifikator ISSN: 1748-0221
KITopen-ID: 1000087876
HGF-Programm 54.02.03 (POF III, LK 01)
Erschienen in Journal of Instrumentation
Band 13
Heft 10
Seiten Art. Nr.: P10004
Schlagworte Particle tracking detectors (Solid-state detectors), Radiation-hard detectors, Solid state detectors
Nachgewiesen in Web of Science
Scopus
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