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DOI: 10.1088/1748-0221/13/10/P10004

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

Anders, J.; Benoit, M.; Braccini, S.; Casanova, R.; Chen, H.; Chen, K.; Bello, F. A. D.; Fehr, A.; Ferrere, D.; Forshaw, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Nessi, M.; ... mehr

Abstract:
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7MeV Cyclotron at Bern Inselspital.


Zugehörige Institution(en) am KIT Institut für Prozessdatenverarbeitung und Elektronik (IPE)
Publikationstyp Zeitschriftenaufsatz
Jahr 2018
Sprache Englisch
Identifikator ISSN: 1748-0221
KITopen-ID: 1000087876
Erschienen in Journal of Instrumentation
Band 13
Heft 10
Seiten Art. Nr.: P10004
Schlagworte Particle tracking detectors (Solid-state detectors), Radiation-hard detectors, Solid state detectors
Nachgewiesen in Scopus
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