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Influence of secondary effects in the fabrication of submicron resist structures using deep x-ray lithography

Faisal, Abrar; Beckenbach, Thomas; Mohr, Jürgen; Meyer, Pascal

Background: Deep x-ray lithography using synchrotron radiation is a prominent technique in the fabrication of high aspect ratio microstructures. The minimum lateral dimensions producible are limited by the primary dose distribution and secondary effects (Fresnel diffraction, secondary electrons scattering, etc.) during exposure. Aim: The influence of secondary radiation effects on the fabrication of high aspect ratio microstructures with submicrometer lateral dimension by deep x-ray lithography is characterized. Approach: The microstructures under investigation are one-dimensional gratings. The influence of secondary effects on structural dimension is simulated and compared to the experimental results. The quality criteria and possible defects arising in experiments highlight the importance of the mechanical stability of the photoresist. Results: From the simulation results, the minimum period of microstructures that can be produced is about 600 nm. Experimentally, microstructures with 1.2  μm minimum period (resist width of ∼700  nm) and height of ∼10  μm could be fabricated. Conclusions: Simulation results show the feasibility for fabricating gratings with a period less than 1  μm. ... mehr

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Verlagsausgabe §
DOI: 10.5445/IR/1000094953
Veröffentlicht am 21.05.2019
DOI: 10.1117/1.JMM.18.2.023502
Zitationen: 2
Web of Science
Zitationen: 2
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Mikrostrukturtechnik (IMT)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 05.2019
Sprache Englisch
Identifikator ISSN: 1537-1646, 1817-6461, 1932-5134, 1932-5150
KITopen-ID: 1000094953
HGF-Programm 43.23.02 (POF III, LK 01) X-Ray Optics
Erschienen in Journal of micro/nanolithography, MEMS and MOEMS
Verlag Society of Photo-optical Instrumentation Engineers (SPIE)
Band 18
Heft 2
Seiten Article no: 023502
Schlagwörter KNMF Proposal 2015-014-006891
Nachgewiesen in Scopus
Web of Science
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