SiC Diode Characterization using Pulsed S-Parameter Measurements
Abstract (englisch):
Considering to power converter systems, the characterization and modeling of wide band gap semiconductors at switching frequencies in the MHz area are very important. In the following a method is presented in order to characterize and build up a non-linear model for a diode at frequencies up to 500 MHz.
| Zugehörige Institution(en) am KIT | Elektrotechnisches Institut (ETI) Institut für Hochleistungsimpuls- und Mikrowellentechnik (IHM) |
| Publikationstyp | Poster |
| Publikationsjahr | 2019 |
| Sprache | Englisch |
| Identifikator | KITopen-ID: 1000099941 |
| HGF-Programm | 35.13.01 (POF III, LK 01) Biomassen und Vorbehandlung |
| Veranstaltung | 21st European Conference on Power Electronics and Applications (EPE`23 ECCE Europe 2019), Genova, Italien, 02.09.2019 – 06.09.2019 |