SiC Diode Characterization using Pulsed S-Parameter Measurements
Abstract (englisch):
Considering to power converter systems, the characterization and modeling of wide band gap semiconductors at switching frequencies in the MHz area are very important. In the following a method is presented in order to characterize and build up a non-linear model for a diode at frequencies up to 500 MHz.
| Zugehörige Institution(en) am KIT | Elektrotechnisches Institut (ETI) Institut für Hochleistungsimpuls- und Mikrowellentechnik (IHM) |
| Publikationstyp | Proceedingsbeitrag |
| Publikationsmonat/-jahr | 09.2019 |
| Sprache | Englisch |
| Identifikator | ISBN: 978-90-75815-31-3 KITopen-ID: 1000100586 |
| HGF-Programm | 32.01.13 (POF III, LK 01) Transmutation: Flüssigmetalltechnologie |
| Erschienen in | 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), Genova, I, September 3-5, 2019 |
| Veranstaltung | 21st European Conference on Power Electronics and Applications (EPE`23 ECCE Europe 2019), Genova, Italien, 02.09.2019 – 06.09.2019 |
| Verlag | Institute of Electrical and Electronics Engineers (IEEE) |
| Seiten | P.1–P.9 |
| Nachgewiesen in | Dimensions Scopus |