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Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

John, L.; Tessmann, A.; Leuther, A.; Neininger, P.; Merkle, T.; Zwick, T.

In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic integrated circuits (MMICs) covering the 280–330-GHz frequency range. The technology used is a 35-nm gate-length InGaAs metamorphic highelectron- mobility transistor (mHEMT) technology. Two power amplifier MMICs are reported, based on a compact unit amplifier cell, which is parallelized two times using two different Wilkinson power combiners. The Wilkinson combiners are designed using elevated coplanar waveguide and air-bridge thin-film transmission lines in order to implement low-loss 70-Ω lines in the back-endof-line of this InGaAs mHEMT technology. The five-stage SSPA MMICs achieve a measured small-signal gain around 20 dB over the 280–335-GHz frequency band. State-of-the-art output power performance is reported, achieving at least 13 dBm over the 286–310-GHz frequency band, with a peak output power of 13.7 dBm (23.4 mW) at 300 GHz. The PA MMICs are designed for a reduced chip width while maximizing the total gate width of 512 μm in the output stage, using a compact topology based on cascode and common-source devices, improving the output power per required chip width significantly.

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Verlagsausgabe §
DOI: 10.5445/IR/1000119890
Veröffentlicht am 12.06.2020
DOI: 10.1109/TTHZ.2020.2965808
Zitationen: 1
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für Hochfrequenztechnik und Elektronik (IHE)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 05.2020
Sprache Englisch
Identifikator ISSN: 2156-342X, 2156-3446
KITopen-ID: 1000119890
Erschienen in IEEE transactions on terahertz science and technology
Band 10
Heft 3
Seiten 309-320
Schlagwörter InGaAs mHEMT, solid-state power amplifier, sub-mm-wave operation
Nachgewiesen in Web of Science
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